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| PD - 94340A HEXFET(R) POWER MOSFET THRU-HOLE (TO-39) IRF7F3704 20V, N-CHANNEL Product Summary Part Number IRF7F3704 BVDSS 20V RDS(on) 0.035 ID 12A* Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-39 Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 12* 12* 48 20 0.16 20 190 12 2.0 0.5 -55 to 150 300 ( 0.063 in./1.6mm from case for 10s) 0.98 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 02/18/01 IRF7F3704 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 20 -- -- -- 1.0 20 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.024 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 7.0 -- -- 0.035 0.04 3.0 -- 20 100 100 -100 19 8.0 6.0 30 175 175 100 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 12A VGS = 4.5V, ID = 12A VDS = VGS, ID = 250A VDS =10V, IDS = 12A VDS = 20V ,VGS=0V VDS = 16V, VGS = 0V, TJ =125C VGS =-20V VGS = -20V VGS =4.5V, ID = 12A VDS = 10V VDD = 10V, ID = 12A, VGS = 4.5V, RG = 1.8 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 1860 990 55 -- -- -- pF Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = 10V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 12* 48 1.3 57 60 Test Conditions A V ns nC Tj = 25C, IS = 12A, VGS = 0V Tj = 25C, IF = 12A, di/dt 100A/s VDD 16V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter R thJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units -- -- -- -- 6.25 175 C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com IRF7F3704 100 VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP 100 VGS 10.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 3.5V 10 3.5V 10 20s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 1 0.1 1 20s PULSE WIDTH Tj = 150C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 12A I D , Drain-to-Source Current (A) 1.5 TJ = 25 C TJ = 150 C 1.0 0.5 10 3.5 15 V DS = 15V 20s PULSE WIDTH 5.0 4.0 4.5 5.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7F3704 2800 2400 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10 ID = 12A 8 VDS = 16V VDS = 10V C, Capacitance (pF) 2000 Ciss C oss 1600 6 1200 4 800 2 400 C rss 0 1 10 100 0 0 10 FOR TEST CIRCUIT SEE FIGURE 13 20 30 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 TJ = 150 C TJ = 25 C 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) 100s 10 10 1ms 1 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Tc = 25C Tj = 150C Single Pulse 1 1 10 10ms VSD ,Source-to-Drain Voltage (V) 100 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7F3704 20 LIMITED BY PACKAGE 16 V DS VGS RG RD D.U.T. + I D , Drain Current (A) -V DD 12 VGS Pulse Width 1 s Duty Factor 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 0.0001 0.001 0.01 PDM t1 t2 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7F3704 500 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 400 TOP BOTTOM ID 5.4A 7.6A 12A VD S L D R IV E R 300 RG D .U .T. IA S + V - DD A 200 VGS 20V tp 0 .0 1 100 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 4.5V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF7F3704 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 15 V, Starting TJ = 25C, L= 2.7mH Peak IAS =12A, VGS = 10V, RG= 25 ISD 12A, di/dt 80A/s, Pulse width 300 s; Duty Cycle 2% VDD 20V, TJ 150C Case Outline and Dimensions -- TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 www.irf.com 7 |
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